cystech electronics corp. spec. no. : c445e3 issued date : 2009.05.12 revised date : page no. : 1/8 MTN50N06E3 cystek product specification n-channel enhancement mode power mosfet bv dss 60v r dson(max) 22 m i d 50a MTN50N06E3 description the MTN50N06E3 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the to-220 package is universally preferred for all commercial-industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant package symbol outline MTN50N06E3 g gate d drain s source to-220 g d s
cystech electronics corp. spec. no. : c445e3 issued date : 2009.05.12 revised date : page no. : 2/8 MTN50N06E3 cystek product specification absolute maximum ratings (t c =25 c) parameter symbol limits unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current i d 50 a continuous drain current @t c =100c i d 35 a pulsed drain current @ v gs =10v (note 1) i dm 200 a avalanche current (note 1) i ar 50 a single pulse avalanche energy (note 2) e as 500 repetitive avalanche energy (note 1) e ar 12 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns w total power dissipation (t c =25 ) linear derating factor pd 120 0.8 w/ c operating junction and storage temperature tj, tstg -55~+175 c maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds t l 300 c note : *1. pulse width limited by maximum junction temperature. *2. l=200 h, i as =50a,v dd =30v, starting t j =+25 *3. i sd 50a, di/dt<100a/ s, v dd bv dss , t j tj(max). thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 1.24 c/w thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w
cystech electronics corp. spec. no. : c445e3 issued date : 2009.05.12 revised date : page no. : 3/8 MTN50N06E3 cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 60 - - v v gs =0, i d =250 a v gs(th) 2.0 2.8 4.0 v v ds = v gs , i d =250 a i gss - - 100 na v gs = 20 i dss - - 5 a v ds =60v, v gs =0 i dss - - 25 a v ds =48v, v gs =0, tj=125 c i don 50 - - a v ds =10v, v gs =10v (note 1) r ds(on) - 19 22 m v gs =10v, i d =30a (note 1) g fs - 28 - s v ds =10v, i d =25a (note 1) dynamic qg - - qgs - - qgd - - nc v ds =80v, i d =30a, v gs =10v (note 1 & 2) t d(on) - - tr - - t d(off) - - t f - - ns v ds =50v, i d =1a, v gs =10v, r gs =6 (note 1 & 2) ciss - - coss - - crss - - pf v gs =0v, v ds =25v, f=1mhz source-drain diode i s - - 50 i sm - - 200 a (note 3) v sd - - 1.5 v i s =25a, v gs =0v (note 1) trr - 52 - ns qrr - 75 - nc v gs =0, i f =50a, di f /dt=100a/ s note : 1. pulse test : pulse width 300 s, duty cycle 2% 2. independent of operating temperature 3. pulse width limited by maximum junction temperature. ordering information device package shipping marking MTN50N06E3 to-220 (rohs compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton 50n06
cystech electronics corp. spec. no. : c445e3 issued date : 2009.05.12 revised date : page no. : 4/8 MTN50N06E3 cystek product specification characteristic curves
cystech electronics corp. spec. no. : c445e3 issued date : 2009.05.12 revised date : page no. : 5/8 MTN50N06E3 cystek product specification characteristic curves(cont.)
cystech electronics corp. spec. no. : c445e3 issued date : 2009.05.12 revised date : page no. : 6/8 MTN50N06E3 cystek product specification test circuit and waveforms
cystech electronics corp. spec. no. : c445e3 issued date : 2009.05.12 revised date : page no. : 7/8 MTN50N06E3 cystek product specification test circuit and waveforms(cont.)
cystech electronics corp. spec. no. : c445e3 issued date : 2009.05.12 revised date : page no. : 8/8 MTN50N06E3 cystek product specification to-220 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. a b e g i k m o p 3 2 1 c n h d 4 marking: 50n06 device name date code 3-lead to-220 plastic package cystek package code: e3 style: pin 1.gate 2.drain 3.source 4.drain dim min. max. min. max. a 0.2441 0.2598 6.20 6.60 i - * 0.1508 - * 3.83 b 0.3386 0.3543 8.60 9.00 k 0.0299 0.0394 0.76 1.00 c 0.1732 0.1890 4.40 4.80 m 0.0461 0.0579 1.17 1.47 d 0.0492 0.0571 1.25 1.45 n - * 0.1000 - * 2.54 e 0.0142 0.0197 0.36 0.50 o 0.5217 0.5610 13.25 14.25 g 0.3858 0.4094 9.80 10.40 p 0.5787 0.6024 14.70 15.30 h - * 0.6398 - * 16.25 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: kfc ; pure tin plated ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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